TIP35,36A,B,C دیتاشیت

TIP35,36A,B,C

مشخصات دیتاشیت

نام دیتاشیت TIP35,36A,B,C
حجم فایل 134.536 کیلوبایت
نوع فایل pdf
تعداد صفحات 8

مشاهده دیتاشیت TIP35,36A,B,C

دانلود دیتاشیت

سایر مستندات

TIP35AG 10 pages

مشخصات فنی

  • RoHS: true
  • Category: Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
  • Datasheet: onsemi TIP35AG
  • Transistor Type: NPN
  • Operating Temperature: -65°C~+150°C@(Tj)
  • Collector Current (Ic): 25A
  • Power Dissipation (Pd): 125W
  • Transition Frequency (fT): 3MHz
  • DC Current Gain (hFE@Ic,Vce): 15@15A,4V
  • Collector Cut-Off Current (Icbo): 1mA
  • Collector-Emitter Breakdown Voltage (Vceo): 60V
  • Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 4V@25A,4A
  • Package: TO-247
  • Manufacturer: onsemi
  • Series: -
  • Packaging: Tube
  • Part Status: Active
  • Current - Collector (Ic) (Max): 25A
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 4V @ 5A, 25A
  • Current - Collector Cutoff (Max): 1mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 15A, 4V
  • Power - Max: 125W
  • Frequency - Transition: 3MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
  • Base Part Number: TIP35
  • detail: Bipolar (BJT) Transistor NPN 60V 25A 3MHz 125W Through Hole TO-247

محصولات مشابه